Transparent thin-film transistor and diode circuit using graphene and amorphous indium–gallium–zinc-oxide active layer

摘要

A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT-diode device can be applied to transparent a-IGZO and graphene integrated circuits.