Time-resolved photoluminescence system with subnanosecond resolution at wavelengths up to 1.65 mu m

摘要

A system for measuring carrier lifetimes as short as 100 ps at luminescence wavelengths up to 1.65 mu m has been developed. This uses the photoluminescence phase shift technique and is based around a guided-wave lithium niobate modulator with a high (5 GHz) bandwidth. Measurements have been performed on an MBE grown sample consisting of 25 AA thick quantum wells of Ga/sub 0.47/In/sub 0.53/As with 100 AA thick barriers of InP, and the lifetime was found to be 3 ns.