High-power (1W,CW) single-lobe operation of LPE-grown GaInAsP/GaInP ( lambda =0.8 mu m) separate-confinement single-quantum-well broad-area lasers

摘要

Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100 mu m-wide stripes that were fabricated from these structures emit over 1 W of optical power per facet at a wavelength of 0.8 mu m in continuous room-temperature operation. A stable single-lobed far-field pattern with a beam divergence as low as 0.6 degrees is obtained in pulsed operation.