Vertical Double-Gate MOSFET Device Technology

摘要

Silicon device technology is facing several difficulties. Especially, explosion of power consumption due to short-channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCE immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly developed vertical DG-MOSFET device technology. This article examines the effectiveness of the vertical DG-MOSFETs in future high-performance and ultralow-power CMOS circuits.