首页> 外文期刊>Electronics and communications in Japan >Fabrication and Evaluation of Complementary Logic Circuits Using Zinc Oxide and Pentacene Thin Film Transistor
【24h】

Fabrication and Evaluation of Complementary Logic Circuits Using Zinc Oxide and Pentacene Thin Film Transistor

机译:使用氧化锌和并五苯薄膜晶体管的互补逻辑电路的制作和评估

获取原文
获取原文并翻译 | 示例
       

摘要

We fabricated hybrid complementary inverters with n-channel zinc oxide (ZnO) transistors as the n-type inorganic material and p-channel organic transistors using pentacene as the p-type organic material. The complementary inverter exhibited a large voltage gain of 10 to 12 and a cutoff frequency of 0.5 kHz. ZnO thin film transistors show n-type semiconducting properties having field-effect mobility of 2.1×10~(-3) cm~2/Vs. On the other hand, pentacene thin film transistors show p-type semiconducting properties having field-effect mobility of 3.2×10~(-2) cm~2/Vs. We describe basic charge transfer characteristics of ZnO thin films. The results obtained here demonstrate that it is important for the transistor using ZnO to be injected charge from electrode to semiconducting material effectively.
机译:我们用n沟道氧化锌(ZnO)晶体管作为n型无机材料,并以并五苯作为p型有机材料的p沟道有机晶体管制造了混合互补逆变器。互补逆变器显示出10至12的大电压增益和0.5 kHz的截止频率。 ZnO薄膜晶体管具有场效应迁移率为2.1×10〜(-3)cm〜2 / Vs的n型半导体特性。另一方面,并​​五苯薄膜晶体管表现出p型半导体特性,其场效应迁移率为3.2×10〜(-2)cm〜2 / Vs。我们描述了ZnO薄膜的基本电荷转移特性。此处获得的结果表明,对于使用ZnO的晶体管有效地将电荷从电极注入半导体材料非常重要。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号