High-Frequency Power Structures, SiGe HBTs Take The Spotlight

摘要

To meet the expanding wireless-communications applications around the world, makers of cellular phones and other mobile communications gear are constantly searching for better RF power amplifiers. Motivated researchers have been exploring transistor structures in both silicon and compound semiconductor materials for higher output power, as well as higher efficiency at RF frequencies. This year's IEDM presents several papers that shed light on the performance of such power amplifiers.