DETERMINING OF DIFFUSION LENGTH OF CARRIERS IN THIN FILMS OF a-Si:H USING SSPG TECHNIQUE

摘要

The steady state photocarrier grating (SSPG) technique has been used for determining diffusion length of carriers in amorphous hydrogenated silicon (a-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation intensity over thickness of the investigated thin film. This spatial distribution is evoked by interference of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.