IMPERFECTIONS OF SOI FILMS PREPARED BY WAFER BONDING AND LAYER EXFOLIATION

摘要

The <100> oriented n-type Si wafers of the diameter of 2 inches with resistivity of ρ=6÷9Ω.cm covered by 100 mm SiO_2 film were subjected to 100 keV H_2+ ion implantation with dose of 5÷6. 10~16 H/cm~2. After implantation I wafers were bonded with unimplanted oxidized (100 nm SiO_2) Si substrates. In some cases surface oxide was removed from implanted wafers before wafer bonding. Exfoliation Was performed in air during 1 h annealing at about 650 deg. C. Some samples were subjected to the Second step of the annealing at 1100 deg. C for 1 h in Ar atmosphere.