Recombination current in forward-biased p-n junctions

摘要

An analytical expression for the recombination current in a forward-biased p-n junction is derived and it is shown that formulas given for the recombination current in most textbooks overestimate the recombination current by a large factor of the order of (V/sub bi/-V)/V/sub th/ where V/sub bi/ is the built-in voltage, V is the applied forward-bias voltage, and V/sub th/ is the thermal voltage.