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Effects of single impurity scattering on one-dimensional quantum-effect devices

机译:单一杂质散射对一维量子效应器件的影响

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Summary form only given. It is shown that a severe degradation in the quantum-effect features occurs when only a single impurity exists in the device. Transport in different lateral regions of the waveguide is studied for a 0.5- mu m-long, 0.3- mu m-wide waveguide. As the waveguide is opened to include a single impurity, an immediate and drastic degradation in the conductance steps is observed, because the presence of the impurity in the channel makes the transmission probability energy dependent and less than unity. By analyzing which 2e/sup 2//h conductance step becomes distorted, the location of two single impurities is pinpointed. One lies very near the thin middle common barrier, while the other lies closer to the outer side barrier. Moreover, in a waveguide containing two impurities, the familiar oscillations in the tunneling current corresponding to the sweeping of the 1D subbands through the Fermi level are completely washed out, due to mode mixing in the vicinity of the impurities.
机译:仅提供摘要表格。结果表明,当器件中仅存在一种杂质时,量子效应特征就会严重退化。研究了0.5微米长,0.3微米宽的波导在波导不同侧面区域的传输。当波导被打开以包括单个杂质时,由于在通道中杂质的存在使得传输概率取决于能量并且小于1,因此在电导步骤中观察到了急剧的退化。通过分析哪个2e / sup 2 // h电导步骤发生失真,可以确定两个单一杂质的位置。一个位于非常薄的中间公共屏障附近,而另一个则位于外侧屏障附近。此外,在包含两种杂质的波导中,由于杂质附近的模式混合,与1D子带通过费米能级的扫描相对应的隧穿电流中的常见振荡被完全冲掉。

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