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Estimation of transient thermal impedance for constant current of a power thyristor using temperature field calculation

机译:利用温度场计算估算功率晶闸管恒定电流的瞬态热阻抗

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Transient thermal impedance for constant current is calculated by dividing the overtemperature of a given spot within a silicon pellet by power losses. The calculation of the temperature field in the silicon pellet is based on the assumption that losses are produced in the silicon pellet only. Calculated results for one power thyristor are compared to its catalog values. The best agreement was obtained in the case of uniform loss distribution throughout the silicon pellet volume, with the temperature at the r/2 spot in the central silicon pellet plane being taken as virtual junction temperature. Understandably, the best agreement obtained was for a temperature at the r/2 spot in silicon pellet's central plane, since the catalog curve is based on the measurement of forward voltage drop which is dependent on total temperature field in a silicon pellet. The difference between calculated transient thermal impedance curve for constant current and its catalog curve in the entire time area is, in this case, for cooling from the anode side, from the cathode side, and from both sides, 11.4, 10.3, and 3.6%, respectively.
机译:恒定电流的瞬态热阻抗可通过将硅片中给定点的过热除以功率损耗来计算。硅粒中温度场的计算基于以下假设:仅在硅粒中会产生损耗。将一个功率晶闸管的计算结果与其目录值进行比较。在整个硅片体积中均匀分布损耗的情况下,获得最佳一致性,将中心硅片平面中r / 2点处的温度作为虚拟结点温度。可以理解的是,获得的最佳协议是硅片中心平面的r / 2点处的温度,因为目录曲线基于正向压降的测量,正向压降取决于硅片中的总温度场。在这种情况下,对于从阳极侧,从阴极侧以及从两侧进行冷却,恒定电流的瞬态热阻抗曲线与其在整个时间范围内的目录曲线之间的差异为11.4%,10.3%和3.6% , 分别。

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