Further Comments on 'Threshold voltage model for deep-submicrometer MOSFETs' and its extension to subthreshold operation

摘要

This correspondence extends Iniguez's results [see ibid., vol. 42, no. 9, p. 1712, 1995] to give threshold voltage expression with higher computational efficiency, and extends the surface potential model at threshold voltage [see ibid., vol. 40, no. 1, p. 86, 1993] to subthreshold operation.