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Compact Physical IR-Drop Models for Chip/Package Co-Design of Gigascale Integration (GSI)

机译:用于千兆级集成(GSI)芯片/封装协同设计的紧凑型物理IR下降模型

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摘要

The supply voltage decrease and power density increase of future GSI chips demand accurate models for the IR-drop. Compact physical IR-drop models of on-chip power/ground distribution networks are derived for two generic types of packages. In the early stages of design, these models enable accurate estimates of all required power/ground grid interconnect dimensions and chip pad counts that are needed for power distribution. The models also quantify the tradeoff between on-chip interconnect dimensions and the number of I/O pads required for power distribution and therefore enable rigorous chip/package co-design. Comparison with SPICE simulations show less than 1% and 5% error for the wire-bond package and the flip-chip package, respectively.
机译:未来的GSI芯片的电源电压降低和功率密度提高需要IR降的准确模型。针对两种通用类型的封装,推导了片上电源/地面配电网络的紧凑型物理IR降模型。在设计的早期阶段,这些模型可以准确估算电源分配所需的所有所需电源/接地网格互连尺寸和芯片焊盘数。该模型还量化了片上互连尺寸和配电所需的I / O焊盘数量之间的折衷,因此可以实现严格的芯片/封装协同设计。与SPICE仿真的比较表明,引线键合封装和倒装芯片封装的误差分别小于1%和5%。

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