A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability

摘要

This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector–emitter saturation voltage of 1.55 V at 200 $ hbox{A/cm}^{2}$ and a tough short-circuit capability of more than 10 $muhbox{s}$. The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector–emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50% lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.