Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

摘要

An analysis of pocket dopant deactivation and its impact on variation for scaled Si devices using an atomistic kinetic Monte Carlo approach are shown in this paper. B 5 keV, /cm As 1 keV, /cm implants were used for B pocket deactivation study. An effect of laser annealing (LA) before spike-Rapid Thermal Annealing (RTA) was investigated. In case of B pocket implant, a stable B cluster configuration is changed from (>1020 °C) to BI at spike-RTA temperature . BI is a source of B pocket deactivation with lower temperature than 1020 °C. LA before low-temperature spike-RTA (<1020 °C) is useful to improve B pocket activation. The mismatch figure of merit extracted from Pelgrom plot (Avt) degradation in nFET is shown as spike-RTA temperature is reduced. LA before spike-RTA shows a better short channel effect with lower drain-induced barrier lowering in nFET. LA + spike-RTA at 1000 °C shows better Avt than spike-RTA-only. The difference of pocket deactivation is one of possible important reasons fo- the higher mismatch for nFET than for pFET.