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机译:1.5μm的薄层土壤上的高压电子注入增强型TC-LIGHT可减少正向压降
National ASIC System Engineering Research Center, Southeast University, Nanjing, China;
National ASIC System Engineering Research Center, Southeast University, Nanjing, China;
National ASIC System Engineering Research Center, Southeast University, Nanjing, China;
National ASIC System Engineering Research Center, Southeast University, Nanjing, China;
National ASIC System Engineering Research Center, Southeast University, Nanjing, China;
National ASIC System Engineering Research Center, Southeast University, Nanjing, China;
Insulated gate bipolar transistors; Silicon-on-insulator; Doping; High-voltage techniques;
机译:使用增强型侧壁层具有低正向压降的高压4H-SiC沟槽MOS势垒肖特基整流器
机译:具有Er掺杂的氧化亚硅层和氧化锡电子注入的低工作电压1.5μm电致发光器件
机译:与p型SOI层上的高压集成电路兼容的高压LDMOS
机译:正压降接近PiN结整流器的高压注入增强型4H-SiC N沟道IGBT的仿真
机译:高压汽车LED驱动器的电力效率和电流准确性增强技术
机译:超薄ALPO4层涂层LINI0.7CO0.15MN0.15O2阴极具有增强的高压和高温性能适用于锂离子半/全电池
机译:高压下隧道结构中的非平衡电子 注射