Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits

摘要

In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-transistor (TFET) virtual technology platform is benchmarked against the projection to the CMOS FinFET 10-nm node, by means of device and basic circuit simulations. The comparison is performed in the ultralow voltage regime (below 500 mV), where the proposed III–V TFETs feature ON-current levels comparable to scaled FinFETs, for the same low-operating-power OFF-current. Due to the asymmetrical n- and p-type $I$ – $Vtext{s}$ , trends of noise margins and performances are investigated for different Wp/Wn ratios. Implications of the device threshold voltage variability, which turned out to be dramatic for steep slope TFETs, are also addressed.