首页> 外文期刊>IEEE Transactions on Electron Devices >Restraining IPMC Back Relaxation in Large Bending Displacements: Applying Non-Feedback Local Gaussian Disturbance by Patterned Electrodes
【24h】

Restraining IPMC Back Relaxation in Large Bending Displacements: Applying Non-Feedback Local Gaussian Disturbance by Patterned Electrodes

机译:在大的弯曲位移中抑制IPMC背驰:通过图案化电极应用非反馈局部高斯扰动

获取原文
获取原文并翻译 | 示例
       

摘要

Despite advantages and promising features of ionic polymer–metal composite (IPMC), this smart material has some drawbacks that should be eliminated as much as possible for improving the IPMC performance. One of the most important drawbacks is the back relaxation (BR). When a step input voltage is applied to the IPMC, it bends toward the anode. The BR is the unwanted and slow bending of the IPMC back toward the cathode. Several techniques based on using a feedback control loop have been proposed for eliminating the BR effect. However, these techniques are effective only when the bending displacement of the IPMC is small. In this paper, we propose a nonfeedback method for restraining the IPMC BR effect even in large bending displacement. The proposed technique is based on the fast reciprocating motions of free water molecules in Nafion membrane between the anode and the cathode. For this purpose, we have used a local Gaussian disturbance in a specifically patterned IPMC. We have described our idea conceptually and we have validated it by several experimental results.
机译:尽管离子聚合物-金属复合材料(IPMC)具有优点和令人鼓舞的特性,但这种智能材料仍存在一些缺点,应尽可能消除这些缺点以改善IPMC性能。最重要的缺点之一是背部放松(BR)。在IPMC上施加阶跃输入电压时,它会向阳极弯曲。 BR是IPMC不必要且缓慢的向阴极弯曲。已经提出了几种基于使用反馈控制回路的技术来消除BR效应。但是,这些技术仅在IPMC的弯曲位移较小时才有效。在本文中,我们提出了一种即使在大弯曲位移下也能抑制IPMC BR效应的非反馈方法。所提出的技术是基于Nafion膜中自由水分子在阳极和阴极之间的快速往复运动。为此,我们在特定模式的IPMC中使用了局部高斯扰动。我们已经从概念上描述了我们的想法,并通过一些实验结果对其进行了验证。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号