机译:纳米级设备中NBTI产生的缺陷:快速表征方法和建模
School of Engineering, Liverpool John Moores University, Liverpool, U.K.;
School of Engineering, Liverpool John Moores University, Liverpool, U.K.;
School of Engineering, Liverpool John Moores University, Liverpool, U.K.;
School of Engineering, Liverpool John Moores University, Liverpool, U.K.;
IMEC, Leuven, Belgium;
Department of Electrical Engineering, University of Malaya, Malaysia;
School of Engineering, Liverpool John Moores University, Liverpool, U.K.;
IMEC, Leuven, Belgium;
IMEC, Leuven, Belgium;
IMEC, Leuven, Belgium;
Stress; Nanoscale devices; Negative bias temperature instability; Thermal variables control; Voltage measurement; Temperature measurement; Degradation;
机译:脉冲中子辐照硅器件中快速瞬态缺陷演化和载流子复合的建模
机译:纳米级器件结的带间电流可变性的表征和建模
机译:成人房间隔缺损闭合后中期房几何和电重构的特征
机译:表征纳米器件中NBTI产生的缺陷的挑战和解决方案
机译:混合有机-无机纳米光电器件的设计方法,制造和表征。
机译:多晶光伏器件中带隙和缺陷的纳米级成像和光谱学
机译:纳米级设备中NBTI产生的缺陷:快速表征方法和建模