机译:使用平均热导率对晶圆上SiGe HBT的热阻进行精确建模
IMS Laboratory, University of Bordeaux, Bordeaux, France;
Department of Electrical Engineering, IIT Madras, Chennai, India;
IMS Laboratory, University of Bordeaux, Bordeaux, France;
IMS Laboratory, University of Bordeaux, Bordeaux, France;
STMicroelectronics, Crolles, France;
IMS Laboratory, University of Bordeaux, Bordeaux, France;
Heating systems; Analytical models; Thermal resistance; Solid modeling; Thermal conductivity; Conductivity;
机译:基极电阻对SiGe HBT提取热阻的影响
机译:从条形SiGe HBT的测量中提取的热阻的验证
机译:SiGe HBT中热阻的BEOL贡献的提取
机译:使用HICUM模型对SiGe HBT的非线性热阻进行热建模
机译:SiGe HBT的功率衍生热表征和使用锁相环的定时电路设计。
机译:纳米结构的热导率和热边界电阻
机译:从条纹几何SiGE HBTs上测量中提取的热阻验证