Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers

摘要

In this work, we demonstrate an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) structure with the incorporation of inverted-V-shaped quantum barriers (QBs). Intriguingly, the light output power (LOP) can be remarkably boosted by 157% in comparison with conventional structure with flat QBs, attributing to the successful enhancement of both electron-blocking capability and hole injection efficiency. More importantly, the device with inverted-V-shaped QBs can greatly accelerate the radiative recombination efficiency, alleviating the efficiency droop to only 3% while this number is as high at 47.1% in conventional DUV LED with flat QBs.