Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of Sheets

摘要

Analytic doping profiles and contact resistivities are adjusted to reproduce measured transfer characteristics of state-of-the-art n-type and p-type FinFETs by Monte Carlo device simulation. The results are used to compare the performance of nanosheets (NSs) and FinFETs at advanced-node device dimensions. It is found that the ON-current normalized by the effective gate width reduces for a higher number of sheets due to a higher access resistance of the lower-lying sheets. In order to reach the same absolute current level of FinFETs with a fin height of 55 nm, more than two sheets for n-type and about four sheets for the p-type NSs with a NS width of 16 nm are needed, respectively. This technology computer-aided design (TCAD) approach can serve as input for design-technology cooptimization (DTCO) of advanced devices.