机译:GaN基GIT和HD-GIT中的热电子陷阱和空穴诱导去陷阱
Department of Information Engineering, University of Padova, Padova, Italy;
Department of Information Engineering, University of Padova, Padova, Italy;
Department of Information Engineering, University of Padova, Padova, Italy;
Department of Information Engineering, University of Padova, Padova, Italy;
Engineering Division, Automotive and Industrial Systems Company, Panasonic Corporation, Nagaokakyo, Japan;
Engineering Division, Automotive and Industrial Systems Company, Panasonic Corporation, Nagaokakyo, Japan;
Engineering Division, Automotive and Industrial Systems Company, Panasonic Corporation, Nagaokakyo, Japan;
Engineering Division, Automotive and Industrial Systems Company, Panasonic Corporation, Nagaokakyo, Japan;
Department of Information Engineering, University of Padova, Padova, Italy;
Department of Information Engineering, University of Padova, Padova, Italy;
Logic gates; Current measurement; Transient analysis; Temperature measurement; Pulse measurements; Gallium nitride; Stress;
机译:直流半导通应力作用下的GaN HD-GIT中漏极电流的应力和恢复动力学
机译:高分子材料中的电荷俘获和俘获:俘获参数
机译:光合细菌Rhodopseudomonas viridis中的能量捕获和释放:转移至捕获的有限动力学
机译:GaN GIT和HD-GIT中的热电子效应:综合分析
机译:基于GaN的设备中电荷诱捕的特征
机译:球形红球菌反应中心突变体中的能量陷阱和陷阱
机译:通过改进的捕集/去捕获模型估算新鲜和热老化低密度聚乙烯的捕集参数