Novel gate dielectric films formed by ion plating for low-temperature-processed polysilicon TFTs

摘要

A novel SiO/sub 2/ film formed by ion plating (IP) at room temperature was developed for low-temperature-processed (LTP) (>625/spl deg/C) polysilicon thin-film transistors (poly-Si TFT's). The IP SiO/sub 2/ film is a high-density dielectric with strained bonds, and also a high-performance insulator with low-leakage current and high-breakdown voltage. Poly-Si TFT with IP SiO/sub 2/ as a gate insulator shows satisfactory performance.