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首页> 外文期刊>IEEE Electron Device Letters >A new three-terminal thyristor-based high-power switching configuration with high-voltage current saturation
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A new three-terminal thyristor-based high-power switching configuration with high-voltage current saturation

机译:具有高压电流饱和的新型基于三端可控硅的大功率开关配置

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摘要

A new high-voltage power switch configuration having thyristor based on-state current conduction together with high-voltage current saturation characteristics is described. Current saturation is obtained in the new thyristor structure by diverting part of the base current at a predesigned current level to bring the NPN and PNP transistors comprising the thyristor out of their regeneratively-coupled conduction mode. The concept has been experimentally verified by fabricating 1200 V, 175 A devices.
机译:描述了一种新的高压功率开关配置,该配置具有基于晶闸管的导通状态电流传导以及高压电流饱和特性。在新的晶闸管结构中,通过以预定的电流水平转移部分基极电流,使组成晶闸管的NPN和PNP晶体管脱离其再生耦合导通模式,可获得电流饱和。该概念已通过制造1200 V,175 A器件进行了实验验证。

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