The accumulation channel driven bipolar transistor (ACBT)

摘要

A new three-terminal power switch called the Accumulation Channel driven Bipolar Transistor (ACBT) is proposed and experimentally demonstrated. In the on-state, the characteristics of the ACBT have been found to approach those of a P-I-N rectifier with a MOSFET in series for regulating its current, an equivalent circuit considered to be an ideal for MOS/Bipolar power devices. Unlike previous devices, the high off-state voltage is supported by the formation of a potential barrier to the flow of electrons from the N/sup +/ emitter into the N-drift region within a depletion region. The absence of the P-base region within the ACBT cells eliminates the parasitic four layer PNPN thyristor which had limited the performance of previous MOS/Bipolar transistor structures. Consequently, the ACBT structure has large maximum controllable and surge current densities in addition to low on-state voltage drop and high-voltage current saturation capability.