Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

摘要

Phase noise in silicon-on-insulator (SOI) MOSFET feedback oscillators for RF IC applications is investigated. The observed correlation between the oscillator's high frequency phase noise and the transistor's low-frequency noise characteristics demonstrates that the phase noise overshoot still exists in partially-depleted (PD) floating body SOI nMOS Colpitts oscillators. These results suggest that kink-induced effects associated with low-frequency components of the signal are upconverted into the ideally kink-free high frequency domain operation mode of PD floating body SOI oscillators.