High Mobility Ge-on-Insulator p-Channel MOSFETs Using Pt Germanide Schottky Source/Drain

摘要

We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%～40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO{sub}2-Ge interface.