Method for Extracting Gate-Voltage-Dependent Source Injection Resistance of Modified Schottky Barrier (MSB) MOSFETs

摘要

The modified Schottky barrier (MSB) MOSFET with low-resistance metal source/drain and good short-channel effect immunity is one of the promising nanoscale device structures. In this letter, a modified external load resistance method was proposed to extract the bias-dependent source injection resistance of the MSB MOSFET for the first time. The effect of the thermal budget of the MSB process on the source injection resistance is reported. The injection resistance is exponentially proportional to $(V_{rm GS} - V_{rm th} - hbox{0.5} V_{rm DS})$ and would be close to the source/drain resistance of conventional MOSFETs at high gate bias. This work provides a good method to directly evaluate the efficiency of the MSB junction.