Partially Depleted SONOS FinFET for Unified RAM (URAM)—Unified Function for High-Speed 1T DRAM and Nonvolatile Memory

摘要

Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxideitride/oxid