Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

摘要

The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation–recombination (g-r) noise at drain currents ${I}_{d} < hbox{5} hbox{nA}$, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure $hbox{1}/f$ noise is observed. It is shown that the carrier number fluctuations are responsible for the $hbox{1}/f$ noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.