A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays

摘要

A simple pixel structure comprising two transistors and one capacitor and a novel driving method are proposed for small-sized and high-resolution active-matrix organic light-emitting diode displays on polycrystalline-silicon thin-film transistor (TFT) backplane. The proposed pixel increases the yield due to small number of TFTs and improves image quality by compensating threshold voltage variations of driving TFTs. The proposed pixel is designed as test pixels with 353 pixels per inch, and the measured emission current error range of $-$74.2$%$ –60.6$%$ is improved to the range of $-$2.5$%$ –2.1$%$ when the proposed pixel is used.