Statistical Investigation of Anomalous Fast Erase Dynamics in Charge Trapping NAND Flash

摘要

In nand Flash nonvolatile memories, the erase operation drives the memory cells threshold voltage toward negative values, barely representing a concern for multilevel architectures. However, during the analysis of the erase dynamics in charge trapping (CT) memory arrays using an incremental step pulse erase algorithm, it is found that a small population of memory cells $({approx}{2%})$ may randomly exhibit anomalous fast erase dynamics, which causes threshold voltage fluctuations during cycling operations. The purpose of this letter is to provide a statistical characterization of this phenomenon in CT-nand Flash arrays, thus helping the comprehension of its underlying physical mechanisms.