High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors

摘要

Tolerance of AlInSb/InAsSb/AlInSb heterostructures quantum-well-based micro-Hall sensors against proton irradiation of 380 keV and proton fluence in the range and (proton/cm) is reported. Defects and deep levels induced by proton irradiation into the heterostructures caused decreases in the mobility of the micro-Hall sensors. Degradation of the magnetic sensitivity started at a proton fluence of (proton/cm) and continued with increasing proton fluence. The variation of the micro-Hall sensors sensitivity was minimal in low-doped AlInSb/InAsSb/AlInSb heterostructure quantum wells. These micro-Hall sensors were operable even at proton fluence of (proton/cm), which makes these devices suitable for space applications with lifetime of thousands of years in the outer space.