Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of ${rm Glass}/{rm SnO}_{2}/{rm MoO}_{3}/{rm i}hbox{-}{rm a}hbox{-}{rm Si}/{rm LiF}/{rm Al}$

摘要

We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of ${rm glass}/{rm SnO}_{2}/{rm MoO}_{3}/{rm i}hbox{-}{rm a}hbox{-}{rm Si}/{rm LiF}/{rm Al}$. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the ${rm MoO}_{3}$ than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the ${rm MoO}_{3}$ layer, obtaining a greatly enhanced conversion efficiency of 6.42%.