Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors

摘要

In this letter, the water-induced (WI) In2O3 nanofibers were prepared by electrospinning using poly(vinyl alcohol) as polymer. The field effect transistors (FETs) based on In2O3 nanofibers were integrated, and the annealing dependence of the FETs performance was investigated. It is found that the FET based on WI In2O3 nanofibers annealed at 380 degrees C for 1 h (In2O3 -380-1h) exhibits a field-effect mobility (mu FE) of 1.53 cm(2)/Vs, and an ON/OFF current ratio (I-ON/I-OFF) of similar to 8 x 10(4). Interestingly, the electrical performance of the FET based on WI In2O3 nanofibers annealed at 280 degrees C for 10 h (In2O3 -280-10h) is comparable with the FET based on In2O3 -380-1h. To further improve the electrical performance of the FETs processed at low temperature, the FET based on In2O3 -280-10h as the channel and the aqueous-route derived ZrOx as dielectric was integrated. The optimized FET exhibits a mu FE of 5.8 cm(2)/Vs, an ION/IOFF of similar to 10(7), and a subthreshold swing (SS) of 150 mV/decade. This nontoxic and fully water-inducement approach is highly expected for the fabrication of low-temperature and flexible circuitry.