Non-Volatile Organic Transistor Memory Based on Black Phosphorus Quantum Dots as Charge Trapping Layer

摘要

High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution-processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 degrees C). The BPQDs with diameter of 12.6 +/- 1.5 nm and large quantum confined bandgap of similar to 2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 10(3) for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 10(4) over 10,000 sec by introducing PMMA as the tunneling layer.