机译:用于欧姆接触形成的微米级退火技术在GaN HEMT栅极优先技术中的应用
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China;
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China;
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China;
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China;
Annealing; Logic gates; Gallium nitride; Electrodes; Ohmic contacts; HEMTs; Tin;
机译:微波退火在AlN / GaN HEMT中形成低温欧姆接触
机译:通过欧姆接触凹口刻蚀在500℃下在AlGaN / GaN HEMT结构中形成欧姆接触
机译:用于GaN HEMT的具有欧姆凹槽和低温退火的通用低电阻欧姆接触工艺
机译:Inaln / GaN HEMT使用微波退火用于低温欧姆接触形成
机译:工程欧姆触点III-V,III-N和2D二均甲基化物:退火和表面制剂对接触电阻的影响
机译:AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
机译:/亚/亚/普/亚.47 / / in / sum.52 / al / sub。/ shi / shin / sum.52 / al / sub.48 /作为HEMT技术利用非退火的欧姆接触策略,自对准0.12μm.48 /作为HEMT技术