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In-Pixel Mobility Compensation Scheme for AMOLED Pixel Circuits

机译:AMOLED像素电路的像素内移动补偿方案

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摘要

This paper demonstrates an in-pixel mobility compensation scheme for AMOLED pixel circuits, which requires only one capacitor and one TFT additionally. The proposed scheme converts the mobility variation into the voltage that is subtracted from the gate voltage of a driving TFT to reduce the current error. The proposed structure is applicable to both n-type and p-type TFT pixel circuits and is robust to the process variation of capacitors because the ratio of two capacitors is utilized. SPICE simulations show that, on average, the current error reduction of 50.1%, 34.9%, and 63.3% is achieved for n-type LTPS TFT, p-type LTPS TFT, and n-type oxide TFT pixel circuits, respectively, compared with a normal pixel circuit without mobility compensation.
机译:本文演示了一种用于AMOLED像素电路的像素内迁移率补偿方案,该方案仅需要一个电容器和一个TFT。所提出的方案将迁移率变化转换为从驱动TFT的栅极电压减去的电压,以减小电流误差。所提出的结构适用于n型和p型TFT像素电路,并且由于利用了两个电容器的比率,因此对于电容器的工艺变化具有鲁棒性。 SPICE仿真显示,与之相比,与之相比,n型LTPS TFT,p型LTPS TFT和n型氧化物TFT像素电路平均平均降低了50.1%,34.9%和63.3%的电流误差。没有迁移率补偿的普通像素电路。

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