As the performance and the function of the recent electronic equipment improve rapidly, the narrow line and space in the wiring pattern of the semiconductors such as memory, CPU and etc. advances increasingly. Already the mass production line has been shifting a Design rule from 0.25μm to 0.18μm , and it is compelled To cope with the process of 0.13μm , at the present. To Respond such demands, high repairing accuracy with 45nm (3σ) or less is required to laser-repair.
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