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First-principles prediction of magnetically ordered half-metals above room temperature

机译:室温以上磁性有序半金属的第一性原理预测

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Half-metallicity (HM) offers great potential for engineering spintronic applications, yet only few magnetic materials present metallicity in just one spin channel. In addition, most HM systems become magnetically disordered at temperatures well below ambient conditions, which further hinders the development of spin-based electronic devices. Here, we use first-principles methods based on density functional theory (DFT) to investigate the electronic, magnetic, structural, mixing, and vibrational properties of 90 X Y Z half-Heusler (HH) alloys ( X = Li, Na, K, Rb, Cs; Y = V, Nb, Ta; Z = Si, Ge, Sn, S, Se, Te). We disclose a total of 28 new HH compounds that are ferromagnetic, vibrationally stable, and HM, with semiconductor band gaps in the range of 1–4?eV and HM band gaps of 0.2–0.8?eV. By performing Monte Carlo simulations of a spin Heisenberg model fitted to DFT energies, we estimate the Curie temperature, T C , of each HM compound. We find that 17 HH HM remain magnetically ordered at and above room temperature, namely, 300 ≤ T C ≤ 450 K, with total magnetic moments of 2 and 4 μ B . A further materials sieve based on zero-temperature mixing energies let us to conclude 5 overall promising HH HM that remain magnetically ordered at and above room temperature: NaVSi, RbVTe, CsVS, CsVSe, and RbNbTe. We also predict 2 semiconductor materials that are ferromagnetic at ambient conditions: LiVSi and LiVGe.
机译:半金属性(HM)为工程自旋电子学应用提供了巨大潜力,但只有极少数磁性材料在一个自旋通道中具有金属性。另外,大多数HM系统在远低于环境温度的温度下会变得磁混乱,这进一步阻碍了基于自旋的电子设备的发展。在这里,我们使用基于密度泛函理论(DFT)的第一原理方法研究90种XYZ半霍斯勒(HH)合金(X = Li,Na,K,Rb)的电子,磁性,结构,混合和振动特性,Cs; Y = V,Nb,Ta; Z = Si,Ge,Sn,S,Se,Te)。我们公开了总共28种具有铁磁性,振动稳定性和HM的新型HH化合物,半导体带隙在1-4?eV范围内,HM带隙在0.2-0.8?eV范围内。通过对适合DFT能量的自旋海森堡模型进行蒙特卡洛模拟,我们估算了每种HM化合物的居里温度T C。我们发现17 HH HM在室温及高于室温(即300≤T C≤450 K)时仍保持磁有序,总磁矩为2和4μB。基于零温度混合能的另一种材料筛让我们得出5种总体有前途的HH HM:NaVSi,RbVTe,CsVS,CsVSe和RbNbTe在室温及高于室温时仍保持磁性排序。我们还预测了2种在环境条件下具有铁磁性的半导体材料:LiVSi和LiVGe。

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