Synthesis ofReN3Thin Films by Magnetron Sputtering

摘要

In this workReNxfilms were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3compound fits in theAma2(40) orthorhombic space group, and due to the existence of N3anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.