首页> 外文期刊>Journal of Advanced Ceramics >Synthesis of AlSubscript4/SubscriptSiCSubscript4/Subscript powders via carbothermic reduction: Reaction and grain growth mechanisms
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Synthesis of AlSubscript4/SubscriptSiCSubscript4/Subscript powders via carbothermic reduction: Reaction and grain growth mechanisms

机译:碳热还原法合成Al 4 SiC 4 粉末的反应及晶粒长大机理

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Highly pure Al4SiC4 powders were prepared by carbothermic reduction at 2173 K using Al2O3, SiO2, and graphite as raw materials. The obtained Al4SiC4 powders owned hexagonal plate-like grains with a diameter of about 200–300 μm and a thickness of about 2–6 μm. Based on the experimental results, the reaction of Al4SiC4 formation and grain evolution mechanisms were determined from thermodynamic and first-principles calculations. The results indicated that the synthesis of Al4SiC4 by the carbothermic reduction consisted of two parts, i.e., solid–solid reactions initially followed by complex gas–solid and gas–gas reactions. The grain growth mechanism of Al4SiC4 featured a two-dimensional nucleation and growth mechanism. The gas phases formed during the sintering process favored the preferential grain growth of (0010) and (1 ī0) planes resulting in formation of hexagonal plate-like Al4SiC4 grains.
机译:以Al2O3,SiO2和石墨为原料,通过2173 K的碳热还原法制备了高纯Al4SiC4粉末。所获得的Al4SiC4粉末具有六角形的板状晶粒,直径约为200–300μm,厚度约为2–6μm。根据实验结果,通过热力学和第一性原理计算确定了Al4SiC4的形成反应和晶粒演化机理。结果表明,碳热还原法合成Al4SiC4包括两部分,即固-固反应最初,然后是复杂的气-固反应和气-气反应。 Al4SiC4的晶粒长大机制具有二维成核和长大机制。在烧结过程中形成的气相有利于(0010)和(1 0)面的优先晶粒生长,从而形成了六角形板状Al4SiC4晶粒。

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