Optical and electrical properties of (Al, V) co-doped ZnO films prepared by RF magnetron sputtering

摘要

ZnOtransparentconductingthinfilmsco-dopedwithAlandVwerepreparedonquartzsubstratesbyradiofrequency(RF)magnetronsputtering.Allthinfilmswereshowntobec-axisoriented,exhibitingonlya(002)diffractionpeak.The(002)diffractionpeaksmovetohighangledirectionandthec-axislatticeconstantdecreasedwithincreasingAlconcentration.Theopticaltransmittanceinthevisibleregionwashigherthan80%.TheopticalbandgapofAlandVco-dopedZnO(AVZO)thinfilmswasbroadenedwithincreasingAlconcentration.TheelectricalpropertiesofAVZOfilmsweresystematicallyanalyzed.TheresultsindicatethatAlisincorporatedismoreeffectiveinimprovingelectricalpropertiesofAVZOfilms.Inaddition,AVZOfilmshaveferromagneticpropertiesanditisexpectedtobeconsideredasapromisingmaterialforspintronics.