A new kind of random access memory is nearing commer-cialization. Known as mag-netic (or magnetoresistive) random access memory, or MRAMM, a bit, "0" or "1", is stored as the orientation of the magnetic moment in a small-size thin-film element. Since no electric power is needed to maintain the memory state, MRAM's are non-volatile. Although, at present, the devices are targeted at replacing slow and expensive FLASH memory, some designs have potential for replacing SRAM, DRAM, and perhaps disk drives in some applications.
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