Modeling Spin-Polarized Electron Transport in Semiconductors for Spintronics Applications

摘要

A primary goal in semiconductor spintronics is to develop a new generation of functional devices that exploit not only an electron's charge (as in today's electronics industry) but also its spin. The authors show how a system of coupled spin drift-diffusion equations can accurately model spin-polarized electron transport in semiconductors. Numerical solutions allow for direct and quantitative comparison with experimental imaging data.