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首页> 外文期刊>Communications in Theoretical Physics >Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires
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Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

机译:自由式圆柱量子阱线中界面和表面光学声子的极性振荡

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摘要

Under dielectric continuum approximation, interface optical (IO) and surface optical (SO) phonon modes as well as the corresponding Froehlich electron-phonon interaction Hamiltonian in a free-standing cylindrical quantum-well wire (QWW) are derived and studied. Numerical calculations on GaAs/Al_x Ca_(1-x)As cylindrical QWW are performed. Results reveal that there are two branches of IO phonon modes and one branch of SO phonon mode, and the dispersion frequencies of IO or SO phonon modes sensitively depend on the Al mole fraction x in Al_x Ga_(1-x)As material and the wave-vector in z direction, k_z. With the increasing of k_z and quantum number m, the frequency of each IO mode approaches one of the two frequency values of the single GaAs/Al_xGa_(1-x)As heterostructure, and the electrostatic potential distribution of the phonon mode tends to be more and more localized at a certain interface or surface, meanwhile, the coupling between the electron-IO and -SO phonons becomes weaker.
机译:在介电连续近似下,推导并研究了独立式圆柱量子阱线(QWW)中的界面光学(IO)和表面光学(SO)声子模式以及相应的Froehlich电子-声子相互作用哈密顿量。进行GaAs / Al_x Ca_(1-x)As圆柱QWW的数值计算。结果表明,IO声子模式有两个分支,SO声子模式有一个分支,IO或SO声子模式的色散频率敏感地取决于Al_x Ga_(1-x)As材料和波中的Al摩尔分数x -z方向的向量-k_z。随着k_z和量子数m的增加,每个IO模式的频率接近单个GaAs / Al_xGa_(1-x)As异质结构的两个频率值之一,并且声子模式的静电势分布趋于更大。并且更多地局限于某个界面或表面,与此同时,电子-IO和-SO声子之间的耦合变得更弱。

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