Multi-Coding ECC Algorithm Based on 3D Charge Trap NAND Flash Hot Region Cell Prediction

摘要

In this letter, threshold voltage shift model based on 3D Charge Trap NAND flash channel characteristics is built for analyzing the distribution shift and error source of algorithms at different storage time. Multi-Coding BCH based on Hot Region (MC-HR-BCH) is a scheme consists of 3 algorithms. It offers good correction capability (130 to 144 errors per 1276 bytes) based on BCH(n = 9200, k = 8192, t = 72). With the help of MC-HR-BCH, the diversity of data in storage time is well handled.