Memristor-Based Low-Power High-Speed Nonvolatile Hybrid Memory Array Design

摘要

In this paper, a memristor-transistor hybrid architecture-based nonvolatile memory array design approach has been proposed. Here, a single memory cell consists of a memristor and one transmission gate, whereas a conventional SRAM cell consists of six transistors. This proposed design has the advantage of being nonvolatile, having high switching speed and low power requirement. The proposed cell shows better performance in comparison with other published memristor-transistor hybrid memory cell.