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Design and simulation of a variable MEMS capacitor for tunable HMSIW resonator

机译:可调谐HMSIW谐振器变量MEMS电容的设计与仿真

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Here, a new design of a variable micro electromechanical system (MEMS) capacitor is introduced to use in telecommunication systems. For the first time, an on-chip MEMS component has been used in the substrate integrated waveguide (SIW) structures to avoid discrete and non-integrated connection problems and high noise levels and affects the operating frequency of telecommunication systems. The behaviour of two capacitors with the fixed-fixed and supported membrane by special spiral arms is analysed and simulated using the finite element method. The MEMS bridges are implemented by a 6 mu m gold layer and an air gap of 3 mu m. It can be seen that using the new special arms, the movement of the membrane is more uniform than the clamped while the actuation voltage is up to 1.32 V and the tuning range of the capacitor is 29%. Then both the capacitors are placed on half-mode SIW structure and the electromagnetic simulation is done. Finally, the results comparison shows that the frequency tuning range of the MEMS variable capacitor is more significant than the other.
机译:这里,引入了可变微机电系统(MEMS)电容器的新设计以用于电信系统。首当,片上MEMS组件已被用于基板集成波导(SIW)结构中,以避免离散和非集成的连接问题和高噪声水平,并影响电信系统的运行频率。通过有限元法分析和模拟具有特殊螺旋臂的两个电容器具有固定固定和支撑膜的行为。 MEMS桥接器由6μm金层和3μm的气隙实现。可以看出,使用新的特殊臂,膜的运动比夹紧更均匀,而致动电压高达1.32 V,电容器的调谐范围是29%。然后,两个电容器都放置在半模式SiW结构上,并完成电磁仿真。最后,结果比较表明,MEMS可变电容器的频率调谐范围比另一个更大。

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